Silicon Nanowires: Doping Dependent N- And P- Channel FET Behavior
نویسندگان
چکیده
The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found pchannel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both nand p-channel FET devices. Comments Copyright Materials Research Society. Reprinted from MRS Proceedings Volume 832. 2004 Fall Meeting Symposium F Group-IV Semiconductor Nanostructures Publisher URL: http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2689&DID=114852&action=detail This conference paper is available at ScholarlyCommons: http://repository.upenn.edu/mse_papers/80 SILICON NANOWIRES: DOPING DEPENDENT NAND PCHANNEL FET BEHAVIOR Kumhyo Byon and John E. Fischer Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, U.S.A. Kofi W. Adu and Peter. C. Eklund Department of Physics, Pennsylvania State University, University Park, PA 16803, U.S.A.
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